^.mi-l,onauctoi , line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUX98 - BUX98a high power npn silicon transistors applications . high frequency and efficency converters . linear and switching industrial equipment description the BUX98 and BUX98a are silicon multiepitaxial mesa npn transistor in jedec to-3 metal case, intended and industrial applications from single and three-phase mains operation. to-3 (version r) internal schematic diagram absolute maximum ratings symbol vcer vces vceo vebo ic icm icp ib ibm plot tstg tj parameter collector-emitter voltage (rbe = < 10 h) collector-base voltage (vbe = 0) collector-emitter voltage (ib = 0) emitter-base voltage (ic = 0) collector current collector peak current (tp < 5 ms) collector peak current non rep. (tp < 20 us) base current base peak current (tp < 5 ms) total power dissipation at tease < 25 c storage temperature max operating junction temperature value BUX98 BUX98a 850 1000 850 1000 400 450 7 30 60 80 8 30 250 -65 to 200 200 unit v v v v a a a a a w c c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BUX98/BUX98a thermal data rthj-case thermal resistance junction-case max 0.7 c/w electrical characteristics (tease = 25 c unless otherwise specified) symbol icer ices iceo iebo vceo(sus)* vcer(sus)* vce(sat)* vee(sal)* ton ts tf ton ts tf parameter collector cut-off current (rbe = 10 i) collector cut-off current (vbe = 0 ) collector cut-off current (le = 0) emitter cut-off current (lc = 0) collector-emitter sustaining voltage collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage turn-on time storage time fall time turn-on time storage time fall time test conditions vce = vces vce = vces tcase = 125 c vce = vces vce = vces tcase =1 25 c vce = vceo veb = 5 v ic = 200 ma for BUX98 for BUX98a l = 2mh lc = 1 a for BUX98 for BUX98a for BUX98 lc = 20 a ib = 4 a for BUX98a ic = 16 a ib = 3.2 a ic = 24a ib = 5a for BUX98 lc = 20 a ib = 4 a for BUX98a lc=16a ib = 3. 2 a for BUX98 vcc = 150 v lc = 20 a |b1 = . |b2 = 4 a for BUX98a vcc = 150 v lc = 16 a ibi = - lb2 = 3.2 a min. 400 450 850 1000 typ. max. 1 8 400 4 2 2 1.5 1.5 5 1.6 1.6 1 3 0.8 1 3 0.8 unit ha ma ha ma ma ma v v v v v v v v v u.s ms us \is us us : pulsed: pulse duration = 300 us, duty cycle = 1.5 %
dim. a b c d e g n p r u v mm win. 0.96 3.88 typ. 11.7 10.9 16.9 30.10 max. 1.10 1.70 8.7 20.0 26.2 4.09 39.50 inch min. 0.037 0.152 typ. 0.460 0.429 0.665 1.185 max. 0.043 0.066 0.342 0.787 1.031 0.161 1.555 m. *eeeee_ /// "i
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